* Single Crystal Silicon Ingots
High quality silicon ingots are produced by the method of Czochralski
(CZ) or Magnetic field applied Czochralski (MCZ) up to 300 mm in diameter.
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* Polished Wafers (PW)
Polished wafers have excellent flatness and cleanliness by polishing chemically and mechanically the wafers sliced out of silicon ingot. The external gettering layer could be produced on the back surface of the polished wafers as option.
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* Annealed Wafers
The polished wafers annealed in hydrogen or argon atmosphere have the improved crystalline perfection of surface.
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* Epitaxial Wafers (EW)
A thin single silicon crystal layer is deposited on the polished wafer by chemical vapor deposition. Epitaxial wafers have superior crystalline perfection.
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* Junction Isolated Wafers (JIW)
Junction Isolated Wafers are epitaxial wafers with buried layers which are produced with the patterns of IC meeting customers' designs by using photolithography, ion-implantation, thermal diffusion technology and so on.
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* Silicon-On-Insulator (SOI) Wafers
Silicon-On-Insulator (SOI) wafers are developed to realize the new generation of semiconductor devices which require larger scale integration (LSI) level, lower power consumption, faster operating speed and/or higher reliability. Three types of SOI wafers are produced as follows.
Direct Bonded Wafers (DBW)
Two polished wafers are bonded directly, standing a thin oxide layer between them.
SIMOX (Separation by IMplanted OXygen)
A thin oxide layer is made near the surface by implanting oxygen ions into a polished wafer.
SIMOX has a thinner active layer than Direct Bonded Wafer, which enables easier separation of devices on the wafer and may shorten process time.
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* Reclaimed Polished Wafers (RPW)
SUMCO has also reclaim-process for used wafers to return high-quality reclaimed wafers to customers. |
* Specifications of Silicon Wafers
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