Product Lineup

• Single Crystal Silicon Ingots
• Polished Wafers (PW)
• Annealed Wafers
• Epitaxial Wafers (EW)
• Junction Isolated Wafers (JIW)
• Silicon-On-Insulator (SOI) Wafers
• Reclaimed Polished Wafers (RPW)
• Specifications of Silicon Wafers

High quality silicon ingots are produced by the method of Czochralski (CZ) or Magnetic field applied Czochralski (MCZ) up to 300 mm in diameter.

Polished wafers have excellent flatness and cleanliness by polishing chemically and mechanically the wafers sliced out of silicon ingot. The external gettering layer could be produced on the back surface of the polished wafers as option.

The polished wafers annealed in hydrogen or argon atmosphere have the improved crystalline perfection of surface.

A thin single silicon crystal layer is deposited on the polished wafer by chemical vapor deposition. Epitaxial wafers have superior crystalline perfection.

Junction Isolated Wafers are epitaxial wafers with buried layers which are produced with the patterns of IC meeting customers' designs by using photolithography, ion-implantation, thermal diffusion technology and so on.

Silicon-On-Insulator (SOI) wafers are developed to realize the new generation of semiconductor devices which require larger scale integration (LSI) level, lower power consumption, faster operating speed and/or higher reliability. Three types of SOI wafers are produced as follows.